Trench tip squaring in self-aligned multi-patterning process

Abstract

The Disclosure is directed to trench tip squaring in self-aligned multi-patterning process. One method may include forming a plurality of linear spacers over a base layer of a semiconductor device, wherein a set of adjacent linear spacers of the plurality of linear spacers define a trench. The method may further include providing a pillar in the trench, wherein the pillar comprises a plurality of recessed corner areas at an intersection between the pillar and the set of adjacent linear spacers. The method may further include performing a plasma treatment to form a film layer in the plurality of recessed corner areas, wherein the plasma treatment comprises directing ions to the plurality of linear spacers at a non-perpendicular angle relative to a plane defined by an upper surface of the base layer.

Images