Semiconductor device and method of forming thereof

Abstract

This disclosure is directed to a structure of a semiconductor device and a method of forming the structure. The structure can include a substrate having active regions and dummy regions on a first side of the substrate. The active regions can include active transistors for normal operation of the semiconductor device, whereas the dummy regions can include dummy structures (such as dummy transistors) to avoid the problem of dishing due to the loading effect during manufacturing the structure. The dummy structures can electrically couple to the active transistors via buried contacts in the substrate. The structure can further include a chip bonded to a second side of the substrate and TSVs in contact with the dummy structures and a bonding pad on the second side of the substrate. Each of the TSVs can be in contact with an array of the dummy structures.

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