Semiconductor devices and methods of fabricating the same

Abstract

Semiconductor devices having deep trench capacitors and methods of fabricating the same are provided. In some embodiments, a method includes forming a second passivation layer on a semiconductor die, the semiconductor die comprising redistribution layer (RDL) pads and a first passivation layer; forming a trench in the semiconductor die through the second passivation layer, between the redistribution pads, and into the first passivation layer; forming a deep trench capacitor within the trench by depositing a first electrode layer, a dielectric layer over the first electrode layer, and a second electrode layer over the dielectric layer; forming a third passivation layer over the deep trench capacitor; and forming at least one bond pad via (BPV) extending from the third passivation layer to a first one of the redistribution pads such that the BPV is electrically connected to the deep trench capacitor.

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