Structure for electrostatic discharge protection device
TW202635161APending Publication Date: 2026-08-16PANSTAR SEMICONDUCTOR CO LTD
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Patent Information
- Application Number
- TW114105082
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-02-11
- Publication Date
- 2026-08-16
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Abstract
A structure for electrostatic discharge protection device is disclosed, which includes a first metal routing layer, a second metal routing layer and a current redistribution structure. The first metal routing layer is connected to a first device. The second metal routing layer is connected to a second device, and the first metal routing layer and the second metal routing layer are configured to be spaced apart. The current redistribution structure is disposed between the first metal routing layer and the second metal routing layer, and the current redistribution structure includes a current redistribution metal, a contact and a diffusion region disposed on a substrate. The current redistribution metal is disposed at a distance from the first metal routing layer and the second metal routing layer. The contact is connected to the current redistribution metal. The diffusion region disposed on the substrate is connected to the contact, and the diffusion region has a doping type the same to that of the substrate.
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