Method for forming a multi-SOI substrate and multi-SOI structure

Abstract

Multi-SOI substrates and devices comprising the same are provided, along with methods for forming and using the same. The multi-SOI substrate can include a deep silicon-on-insulator (SOI) region and a shallow bias-controlled SOI region and integrated circuits thereon, or two shallow bias-controlled SOI regions. The base substrate is doped in multiple steps to form various layers, including a pickup layer in the shallow SOI region. The pickup layer is formed over a buried dielectric layer, and a semiconducting substrate is present over the pickup layer. A contact layer is formed upon the pickup layer. An isolation region is present over the contact layer, and an electrical contact is formed to the contact layer. The pickup layer is electrically connected to the semiconducting substrate. Other integrated circuits can be formed on the base substrate as well. This results in flexible design layouts.

Images