Substrate processing method and substrate processing apparatus

Abstract

This disclosure provides a substrate processing method and apparatus that can suppress deviations in processing width and improve processing quality even when processing the peripheral portion of a substrate is performed while heating it on one side. The substrate processing method specifies a heating temperature and processing width for a processing space. Within the heated processing space, processing material is ejected from a predetermined ejection position corresponding to the processing width toward the peripheral portion of a rotating substrate. The processing space is heated to a predetermined heating temperature, and the substrate is placed in a warped state. Processing material is then ejected from an ejection position corresponding to a predetermined processing width toward the peripheral portion of the warped substrate. The actual processing width is measured, and an adjustment amount is set for the ejection position corresponding to the predetermined processing width based on the deviation between the actual processing width and the predetermined processing width.

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