CMP slurry composition for polishing copper layer and method of polishing copper layer using the same
TW202635851APending Publication Date: 2026-09-01SAMSUNG SDI CO LTD
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Patent Information
- Application Number
- TW114145378
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-06
- Filing Date
- 2025-11-20
- Publication Date
- 2026-09-01
Abstract
Disclosed herein are a CMP slurry composition for polishing a copper layer, and a method of polishing a copper layer using the CMP slurry. The CMP slurry composition includes at least one solvent among a polar solvent and a nonpolar solvent, an abrasive agent, and a dishing and erosion inhibitor. The dishing and erosion inhibitor includes a mixture of a copolymer of acrylic acid and acrylamide, and a phosphorus compound.
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