Method for growing twelve inches diamond polycrystalline film

Abstract

The present invention provides a method for growing an oversized diamond polycrystalline film, the method comprising the following steps: S1, cleans and dry a single crystal silicon wafer at room temperature. S2, preprocess a single crystal silicon wafer with seed crystal so that a silicon surface covered by a layer of diamond nanocrystal layer, and places the single crystal silicon wafer in the MPCVD equipment. S3, evacuates a chamber of MPCVD equipment, then aerates hydrogen into the chamber, and then evacuates the chamber again. Aerates hydrogen in the chamber and adjusts pressure to

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