Method and system for enhancing growth of chalcogen films
TW202635924APending Publication Date: 2026-09-01NEXSTROM PTE LTD
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Patent Information
- Application Number
- TW114150214
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-20
- Filing Date
- 2025-12-19
- Publication Date
- 2026-09-01
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Abstract
A device is described. The device includes a substrate and a transition metal chalcogen film formed on the substrate by vapor deposition. The transition metal chalcogen film is continuous over an area of the substrate and is at least one monolayer thick. The area has a dimension of at least two inches. The vapor deposition may use a metal precursor, a chalcogen precursor, and at least one additive.
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