Method for nitriding metal oxide films and method for manufacturing semiconductor device using the same

Abstract

The metal oxide nitriding method based on the embodiment is a metal oxide nitriding method utilizing a substrate processing apparatus. The apparatus includes: a process chamber having a processing space formed inside for substrate processing; a gas injection unit supplying gas to the processing space; a substrate placement unit disposed opposite to the gas injection unit and having a substrate placed on its upper portion; and a plasma power supply unit supplying RF power for forming plasma to the processing space. The method includes the following steps: preparing a substrate with a metal oxide film formed on its upper portion; applying RF power to form plasma in the processing space; and supplying nitrogen-containing gas to diffuse nitrogen free radicals into the metal oxide film. The step of diffusing nitrogen free radicals into the metal oxide film includes: maintaining the processing space at a first pressure to diffuse the nitrogen free radicals into the metal oxide film; and maintaining the processing space at a second pressure different from the first pressure to diffuse the nitrogen free radicals into the metal oxide film. none

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