Apparatus for processing substrate

Abstract

The substrate processing apparatus of the present invention includes: a process chamber including a processing space having a first process region and a second process region; a gas injection unit including a source gas injection unit and a reaction gas injection unit that respectively inject source gas and reaction gas into the first and second process regions, and a separation gas injection unit that injects separation gas that spatially separates the processing space; a substrate support unit for mounting a plurality of substrates; a temperature adjustment unit including a first process temperature adjustment unit for adjusting the temperature of the source gas injection unit, a second process temperature adjustment unit for adjusting the temperature of the reaction gas injection unit, and a separation temperature adjustment unit for adjusting the temperature of the separation gas injection unit; and a control unit for controlling the drive of the separation temperature adjustment unit such that the temperature T1 of the separation gas injection unit becomes a temperature between the temperature T2 of the source gas injection unit and the temperature T3 of the reaction gas injection unit. none

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