Substrate, epitaxial growth equipment and epitaxial wafer

Abstract

This invention provides a base, an epitaxial growth apparatus, and an epitaxial wafer. The base includes: a base; an annular support stage surrounding the base; the upper surface of the annular support stage is an inclined surface with a decreasing height from the outer edge of the annular support stage toward the upper surface of the base; the upper surface of the annular support stage makes line contact with the back periphery of the substrate wafer; a first vent hole penetrating to the back of the base is provided on the upper surface of the annular support stage, and a second vent hole penetrating to the back of the base is provided on the upper surface of the base, wherein the size of the first vent hole is smaller than the size of the second vent hole and the arrangement density of the first vent hole is greater than the arrangement density of the second vent hole.

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