Etching method

TW202635942APending Publication Date: 2026-09-01KAO CORP
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Patent Information

Application Number
TW114140690
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-10-17
Filing Date
2025-10-21
Publication Date
2026-09-01
Patent Text Reader

Abstract

In one embodiment, the present invention provides an etching method that can suppress the increase in etching rate caused by the increase in water content in the etching solution. In one embodiment, the present invention relates to an etching method for etching a molybdenum-containing layer, and includes the following steps 1 and 2: Step 1: Contacting an etching solution containing nitric acid and phosphoric acid with the molybdenum-containing layer to be etched; Step 2: Adding an acid anhydride to the etching solution after step 1.
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