Display panel
Patent Information
- Application Number
- TW114106042
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-02-19
- Publication Date
- 2026-09-01
- Estimated Expiration
- 2045-02-18
AI Technical Summary
The reduction in pixel structure size for display panels, particularly in transflective displays, leads to a decrease in storage capacitor size, resulting in deteriorated display quality under low-frequency driving, as the ratio of transmissive to reflective areas is fixed, limiting design flexibility.
The display panel design includes a first and second transparent electrode that overlap in both transmissive and reflective areas, forming storage capacitors, allowing for flexible adjustment of the ratio between these areas without being constrained by storage capacitor requirements.
This design enhances the flexibility of pixel structure design by maintaining sufficient storage capacitance, improving both optical and electrical performance.
Smart Images

Figure TWG2TA001073726_001 
Figure TWG2TA001073726_002 
Figure TWG2TA001073726_003
Abstract
Description
[Technical Field]
[0001] This invention relates to a display technology, and more particularly to a display panel. [Previous Technology]
[0002] A pixel structure is the smallest driving unit used by a display panel to display images. To ensure that the driving signal of the pixel structure remains at a certain level within a predetermined time interval, most pixel structures are equipped with storage capacitors. To achieve better display quality, the size of pixel structures has been continuously reduced, which has also compressed the available space for the storage capacitors. Especially in transflective display panels, the storage capacitors are generally located within the reflective area. If the proportion of the transmissive area of the pixel structure is to be increased, the proportion of the reflective area must be reduced. As a result, the storage capacitor of the pixel structure will also be reduced, leading to a deterioration in the display quality of the display panel under low-frequency driving. [Summary of the Invention]
[0003] The present invention provides a display panel in which the ratio of the transmissive area to the reflective area of the pixel structure is more flexible, and the pixel structure can still have sufficient storage capacitance.
[0004] The display panel of the present invention includes a first substrate, a pixel structure, and an insulating layer. The pixel structure is disposed on the first substrate and has a reflective area and a transmissive area. The pixel structure includes an active element, a first transparent electrode, a reflective layer, and a second transparent electrode. The first transparent electrode and the second transparent electrode overlap in the transmissive area. The second transparent electrode is located between the first transparent electrode and the first substrate. The reflective layer is disposed on the active element and defines the reflective area. The insulating layer is disposed between the first transparent electrode and the second transparent electrode. The first transparent electrode or the second transparent electrode is electrically connected to the active element. The first transparent electrode and the second transparent electrode are electrically coupled to form a storage capacitor.
[0005] In one embodiment of the present invention, the first transparent electrode and the second transparent electrode of the display panel are further disposed in an overlapping reflective area, and the first transparent electrode is electrically connected to an active element.
[0006] In one embodiment of the present invention, the display panel further includes a coating layer disposed between the first transparent electrode and the first substrate, and covering the active element. The second transparent electrode is disposed between the insulating layer and the coating layer.
[0007] In one embodiment of the present invention, the pixel structure of the display panel further includes a common electrode disposed between the cladding layer and the first transparent electrode, and located within the reflective region. The second transparent electrode extends into the reflective region and directly contacts the common electrode.
[0008] In one embodiment of the present invention, the pixel structure of the display panel further includes a capacitor electrode located in the reflective region and extending from the drain of the active element. The common electrode is electrically coupled to the capacitor electrode to form another storage capacitor.
[0009] In one embodiment of the present invention, the display panel further includes a second substrate, a common electrode layer, and a liquid crystal layer. The second substrate overlaps the first substrate. The common electrode layer is disposed on the second substrate. The liquid crystal layer is disposed between the first substrate and the second substrate. The cladding layer has an opening located within the transmissive region. The thickness of the liquid crystal layer in the transmissive region is greater than the thickness of the liquid crystal layer in the re-reflective region.
[0010] In one embodiment of the present invention, the first transparent electrode of the above-mentioned display panel has a plurality of micro-slits in the penetration area, and the common electrode layer has an electrode opening overlapping the penetration area.
[0011] In one embodiment of the present invention, the reflective layer of the display panel and the second transparent electrode are the same film layer and are electrically connected to each other.
[0012] In one embodiment of the present invention, the thickness of the second transparent electrode of the display panel is less than the thickness of the reflective layer.
[0013] In one embodiment of the present invention, the material of the second transparent electrode and the reflective layer of the display panel includes silver.
[0014] In one embodiment of the present invention, the first transparent electrode of the above-mentioned display panel is electrically coupled to the reflective layer to form another storage capacitor.
[0015] In one embodiment of the present invention, the display panel further includes a coating layer disposed between the first transparent electrode and the first substrate, and covering the active element. The coating layer has an opening located in the transparent region. A second transparent electrode is disposed between the coating layer and the first substrate.
[0016] In one embodiment of the present invention, the display panel further includes a second substrate, a common electrode layer, and a liquid crystal layer. The second substrate overlaps the first substrate. The common electrode layer is disposed on the second substrate. The liquid crystal layer is disposed between the first substrate and the second substrate. The thickness of the liquid crystal layer in the transmissive region is greater than the thickness of the liquid crystal layer in the reflective region.
[0017] In one embodiment of the present invention, the first transparent electrode of the above-mentioned display panel has a plurality of micro-slits in the penetration area, and the common electrode layer has an electrode opening overlapping the penetration area.
[0018] In one embodiment of the present invention, the pixel structure of the display panel further includes a capacitor electrode and a common electrode. The capacitor electrode is located in the reflective region and extends from the drain of the active element. The common electrode is disposed between the capacitor electrode and the first substrate and is located in the reflective region. The common electrode overlaps the capacitor electrode.
[0019] In one embodiment of the present invention, the first transparent electrode of the display panel extends into the reflective area and is electrically connected to the capacitor electrode. The second transparent electrode is electrically connected to the common electrode. The capacitor electrode is electrically coupled to the common electrode to form another storage capacitor.
[0020] In one embodiment of the present invention, the pixel structure of the display panel further includes a third transparent electrode. The third transparent electrode is disposed in an overlapping reflective area and is electrically connected to a capacitor electrode.
[0021] In one embodiment of the present invention, the first transparent electrode and the third transparent electrode of the display panel are the same film layer and are electrically independent of each other.
[0022] In one embodiment of the present invention, the second transparent electrode of the display panel is electrically connected to the capacitor electrode. The capacitor electrode is electrically coupled to the common electrode to form another storage capacitor.
[0023] In one embodiment of the present invention, the first transparent electrode of the above-mentioned display panel extends into the reflective area and is electrically connected to the reflective layer.
[0024] Based on the above, in a display panel according to an embodiment of the present invention, a first transparent electrode and a second transparent electrode are provided in the transmissive area of the pixel structure. The first transparent electrode and the second transparent electrode are electrically coupled to each other and form a storage capacitor electrically connected to the active element. Since the storage capacitor can be arranged overlapping the transmissive area, the ratio adjustment of the reflective area and the transmissive area of the pixel structure is no longer limited by the requirements of the storage capacitor, which helps to increase the design flexibility of the pixel structure when it needs to take into account both optical and electrical performance.
Implementation Method
[0025] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the drawings. Wherever possible, the same element symbols are used in the drawings and description to denote the same or similar parts.
[0026] FIG1 is a front view schematic diagram of a display panel according to a first embodiment of the present invention. FIG2 is a cross-sectional schematic diagram of the display panel of FIG1. FIG2 corresponds to the cross-section line A-A' of FIG1. For clarity, FIG1 omits the second substrate 200 and the liquid crystal layer 300 shown in FIG2.
[0027] Referring to Figures 1 and 2, the display panel 10 includes a first substrate 100, a second substrate 200, and a liquid crystal layer 300. The liquid crystal layer 300 is disposed between the first substrate 100 and the second substrate 200. That is, the display panel 10 in this embodiment is a liquid crystal display panel, but it is not limited thereto.
[0028] Further, the first substrate 100 may be provided with multiple scan lines SL, multiple data lines DL, and multiple pixel structures PX. Each pixel structure PX is electrically connected to a scan line SL and a data line DL. Figure 1 only shows one pixel structure PX of the display panel 10, but it is understood that the display panel 10 may be composed of multiple pixel structures PX arranged together. For example, the multiple pixel structures PX may be arranged in multiple columns and multiple rows along directions X and Y, respectively. The multiple data lines DL may be arranged along direction X and each extend in direction Y, and the multiple scan lines SL may be arranged along direction Y and each extend in direction X, wherein direction X is not parallel to direction Y. In this embodiment, direction X may be selectively perpendicular to direction Y, but is not limited thereto.
[0029] The pixel structure PX includes an active element T. The active element T has a source SE, a drain DE, a gate GE, and a semiconductor pattern SC. The method of forming the active element T includes, for example, forming the gate GE, the gate insulating layer 110, the semiconductor pattern SC, the source SE, and the drain DE sequentially on the first substrate 100, but is not limited thereto. The source SE and the drain DE are electrically connected to two different regions of the semiconductor pattern SC, respectively. The source SE is electrically connected to a corresponding data line DL. The gate GE is electrically connected to a corresponding scan line SL. More specifically, the portion of the scan line SL extending from the pixel structure PX can serve as the gate GE of the active element T, and the portion of the data line DL extending from the pixel structure PX can serve as the source SE of the active element T.
[0030] The semiconductor pattern SC can serve as the channel layer of the active element T. The material of the semiconductor pattern SC may include amorphous silicon semiconductor, monocrystalline silicon semiconductor, polycrystalline silicon semiconductor, or metal oxide semiconductor. In this embodiment, the active element T is, for example, an amorphous silicon thin film transistor (a-Si TFT), but is not limited thereto. In other embodiments, the active element T may also be a polycrystalline silicon thin film transistor (poly-Si TFT) or a metal oxide semiconductor thin film transistor (metal oxide semiconductor TFT).
[0031] In this embodiment, the gate GE may be selectively disposed below the semiconductor pattern SC to form a bottom-gate thin-film transistor, but is not limited thereto. In other embodiments, the gate GE may also be disposed above the semiconductor pattern SC to form a top-gate thin-film transistor. For conductivity considerations, the source SE, drain DE, and gate GE of the scan line SL, data line DL, and active element T are generally made of metals (e.g., molybdenum, aluminum, copper, nickel, chromium), alloys, nitrides of metal materials, oxides of metal materials, oxynitrides of metal materials, or other suitable materials, or a stacked layer of metal materials and other conductive materials. The material of the gate insulating layer 110 includes, for example, silicon oxide, silicon nitride, or other suitable dielectric materials.
[0032] First, it should be noted that the pixel structure PX may have a reflective area RA and a transmissive area TA. That is, the display panel 10 in this embodiment may be a semi-transmissive display panel or a micro-transmissive display panel. In this embodiment, the pixel structure PX also includes a first transparent electrode TE1, a second transparent electrode TE2, and a reflective layer RL. The reflective layer RL is disposed on the active element T and located within the reflective area RA. The first transparent electrode TE1 and the second transparent electrode TE2 are disposed along the direction Z, overlapping the transmissive area TA and the reflective area RA. Unless otherwise specified below, the overlap relationship between the two components is defined by the direction Z, and the overlap direction will not be described again.
[0033] From another perspective, the reflective region RA of the pixel structure PX can be defined by the distribution range of the reflective layer RL, while the portion of the first transparent electrode TE1 that does not overlap with the reflective layer RL, the data line DL, and the scan line SL can define the penetrating region TA of the pixel structure PX (as shown in Figure 1). In this embodiment, the reflective layer RL can directly cover and electrically connect to the first transparent electrode TE1. The materials of the first transparent electrode TE1 and the second transparent electrode TE2 include metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above. The material of the reflective layer RL includes, for example, silver, silver alloy, or other materials with high reflectivity.
[0034] A first transparent electrode TE1 is disposed between the liquid crystal layer 300 and the first substrate 100. A second transparent electrode TE2 is disposed between the first transparent electrode TE1 and the first substrate 100. In this embodiment, the first transparent electrode TE1 can be electrically connected to the drain DE of the active element T. That is, the first transparent electrode TE1 can serve as the pixel electrode of the pixel structure PX. It is particularly noteworthy that in this embodiment, the first transparent electrode TE1 and the second transparent electrode TE2 can be electrically coupled to form the storage capacitor C of the pixel structure PX.
[0035] Since the storage capacitor C in this embodiment can be set in addition to the overlapping reflection area RA, it can also be set in the overlapping transmission area TA. The ratio adjustment of the reflection area RA and the transmission area TA of the pixel structure PX is no longer limited by the requirements of the storage capacitor C, which helps to increase the design flexibility of the pixel structure PX when it needs to take into account both optical and electrical performance.
[0036] For example, in this embodiment, an insulating layer 121, an insulating layer 122, and a coating layer 130 may be provided between the first transparent electrode TE1 and the first substrate 100. The insulating layer 121 and the coating layer 130 cover the active element T, and the insulating layer 121 is located between the coating layer 130 and the active element T. The coating layer 130 has an opening OP that overlaps with the reflective region RA. In this embodiment, the second transparent electrode TE2 may be disposed on the coating layer 130, and the insulating layer 122 is disposed between the first transparent electrode TE1 and the second transparent electrode TE2. That is, the second transparent electrode TE2 is located between the insulating layer 122 and the coating layer 130. For example, the first transparent electrode TE1 may be disposed between the reflective layer RL and the insulating layer 122, and is electrically connected to the drain DE of the active element T via the opening OP of the coating layer 130 and the contact hole TH of the insulating layer 121 and the insulating layer 122.
[0037] The cladding layer 130 is, for example, an organic insulating layer, the material of which includes, for example, polyesters, polyolefins, polyacrylic acids, polycarbonates, polyoxyalkylenes, polystyrene, polyethers, polyketides, polyols, polyaldehydes, or other suitable materials, or combinations thereof. Insulating layers 121 and 122 are, for example, inorganic insulating layers, the material of which includes, for example, silicon nitride, silicon oxide, or aluminum oxide, but is not limited thereto.
[0038] Furthermore, the display panel 10 may also include a common electrode layer (CEL) disposed on the surface of the second substrate 200 facing the liquid crystal layer 300, that is, the common electrode layer CEL is located between the second substrate 200 and the liquid crystal layer 300. In this embodiment, the common electrode layer CEL may receive a common voltage, but is not limited thereto. The common electrode layer CEL may be, for example, a light-transmitting electrode, and the material of the light-transmitting electrode may include, for example, metal oxides (e.g., indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above), but is not limited thereto. For example, the electric field formed between the first transparent electrode TE1 (i.e., the pixel electrode) and the common electrode layer CEL can control the orientation of the liquid crystal molecules in the liquid crystal layer 300 to display the corresponding image.
[0039] Other embodiments will be listed below to illustrate this disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the foregoing embodiments, and they will not be repeated below.
[0040] FIG3 is a cross-sectional schematic diagram of a display panel according to a second embodiment of the present invention. Referring to FIG3, the difference between the display panel 10A of this embodiment and the display panel 10 of FIG2 is that the configuration of the reflective layer is different. Specifically, in the display panel 10A of this embodiment, the reflective layer RL-A of the pixel structure PX-A and the second transparent electrode TE2-A can be the same film layer and are electrically connected to each other.
[0041] For example, in this embodiment, the reflective layer RL-A can be disposed between the cladding layer 130 and the insulating layer 122, and the materials of the reflective layer RL-A and the second transparent electrode TE2-A include, for example, silver, silver alloy, or other conductive materials with high reflectivity. It should be noted that the reflective layer RL-A and the second transparent electrode TE2-A have thicknesses t1 and t2 respectively along the normal direction (e.g., direction Z) of the substrate surface 100s of the first substrate 100, and the thickness t2 of the second transparent electrode TE2-A is less than the thickness t1 of the reflective layer RL-A. Since the second transparent electrode TE2-A is sufficiently thin, it can still have a certain transmittance for visible light.
[0042] In this embodiment, in addition to being electrically coupled to the second transparent electrode TE2-A in the transmission region TA to form a storage capacitor C1, the first transparent electrode TE1 can also be electrically coupled to the reflective layer RL-A in the reflection region RA to form another storage capacitor C2. That is to say, in this embodiment, the storage capacitor of the pixel structure PX-A is formed by the parallel connection of the storage capacitor C1 in the transmission region TA and the storage capacitor C2 in the reflection region RA.
[0043] Since the storage capacitor in this embodiment can be set in addition to the overlapping reflection area RA, it can also be set in the overlapping transmission area TA. The ratio adjustment of the reflection area RA and the transmission area TA of the pixel structure PX-A is no longer limited by the storage capacitor requirement, which helps to increase the design flexibility of the pixel structure PX-A when it needs to take into account both optical and electrical performance.
[0044] From another perspective, the portion of the second transparent electrode TE2 located in the reflective region RA in FIG2 can be replaced by the reflective layer RL-A of this embodiment. Therefore, in this embodiment, the reflective layer RL as shown in FIG2 does not need to be provided on the first transparent electrode TE1. That is to say, compared with the display panel 10 of FIG2, the display panel 10A of this embodiment can have a more simplified manufacturing process.
[0045] FIG4 is a front view schematic diagram of a display panel according to a third embodiment of the present invention. FIG5 is a cross-sectional schematic diagram of the display panel of FIG4. FIG5 corresponds to the section line B-B' of FIG4. For clarity, the second substrate 200 and the liquid crystal layer 300 in FIG5 are omitted from FIG4.
[0046] Referring to Figures 4 and 5, the main difference between the display panel 20 of this embodiment and the display panel 10 of Figures 1 and 2 lies in the composition of the pixel structure. Specifically, in the display panel 20 of this embodiment, the pixel structure PX-B may further include a common electrode CE, a capacitor electrode CPE, and an insulating layer 123. The common electrode CE is disposed between the cladding layer 130 and the first transparent electrode TE1, and is located within the reflective region RA. The capacitor electrode CPE is located in the reflective region RA and extends from the drain electrode DE of the active element T. The insulating layer 123 is disposed between the common electrode CE and the first transparent electrode TE1.
[0047] In this embodiment, the second transparent electrode TE2-B and the common electrode CE are disposed between the insulating layer 122 and the insulating layer 123, and the second transparent electrode TE2-B directly contacts the common electrode CE within the reflective region RA. For example, in this embodiment, the common electrode CE may be disposed between the second transparent electrode TE2-B and the insulating layer 122, but this is not a limitation. In other embodiments, the second transparent electrode TE2-B may be disposed between the common electrode CE and the insulating layer 122. The common electrode CE may receive a common voltage, but this is not a limitation.
[0048] It is particularly noteworthy that, in this embodiment, in addition to the first transparent electrode TE1 and the second transparent electrode TE2-B being electrically coupled to form a storage capacitor C1 within the reflection region RA and the transmission region TA, the common electrode CE and the capacitor electrode CPE can also be electrically coupled to form another storage capacitor C2 within the reflection region RA. More specifically, the storage capacitor of the pixel structure PX-B in this embodiment is formed by the parallel connection of storage capacitor C1 and storage capacitor C2. From another perspective, when the transmission region TA of the pixel structure PX-B increases, the insufficient storage capacity caused by the reduction in the reflection region RA can be compensated not only by the setting of the common electrode CE and the capacitor electrode CPE, but also by the storage capacitor formed by the first transparent electrode TE1 and the second transparent electrode TE2-B in the transmission region TA, which can further improve the overall storage capacity of the pixel structure PX-B. Therefore, the ratio adjustment of the reflection region RA and the transmission region TA of the pixel structure PX-B is no longer limited by the storage capacitor requirement, which helps to increase the design flexibility of the pixel structure PX-B when it needs to take into account both optical and electrical performance.
[0049] On the other hand, in this embodiment, the capacitor electrode CPE, the common electrode CE, and the reflective layer RL-B each have an opening CPEop, an opening CEop, and an opening RLop located within the penetration region TA. The insulating layers 121, 122, and 123 have contact holes TH” overlapping the opening OP of the cladding layer 130, and the first transparent electrode TE1 and the reflective layer RL-B can be electrically connected to the capacitor electrode CPE via the opening OP of the cladding layer 130 and the contact holes TH” of the insulating layers 121, 122, and 123.
[0050] For conductivity considerations, the common electrode CE and the capacitor electrode CPE are generally made of metals (such as molybdenum, aluminum, copper, nickel, chromium), alloys, nitrides of metal materials, oxides of metal materials, oxynitrides of metal materials, or other suitable materials, or stacked layers of metal materials and other conductive materials. The insulating layer 123 is, for example, an inorganic insulating layer, and its materials include, for example, silicon nitride, silicon oxide, or aluminum oxide, but are not limited thereto.
[0051] FIG6 is a front view schematic diagram of a display panel according to a fourth embodiment of the present invention. FIG7 is a cross-sectional schematic diagram of the display panel of FIG6. FIG7 corresponds to the section line C-C' of FIG6. For clarity, FIG6 omits the second substrate 200 and liquid crystal layer 300 shown in FIG7.
[0052] Referring to Figures 6 and 7, the main difference between the display panel 30 of this embodiment and the display panel 10 of Figures 1 and 2 is that the configuration of the second transparent electrode and the cladding layer is different. Specifically, in the display panel 30 of this embodiment, the second transparent electrode TE2-C of the pixel structure PX-C is disposed between the cladding layer 130A and the first substrate 100, and is generally located within the transmissive region TA.
[0053] In this embodiment, the pixel structure PX-C may further include a capacitor electrode CPE and a common electrode CE-A disposed within the reflective region RA. The capacitor electrode CPE may extend from the drain DE of the active element T. The common electrodes CE of two adjacent pixel structures PX arranged along the direction X may be electrically connected to each other via a common electrode connection line CL, but are not limited thereto. Unlike the display panel 20 in FIG5, in this embodiment, the common electrode CE-A and the gate GE of the active element T may be formed in the same metal layer. That is, the common electrode CE-A is disposed between the capacitor electrode CPE and the first substrate 100.
[0054] It is particularly noteworthy that the second transparent electrode TE2-C can extend into the reflective region RA and directly contact the common electrode CE-A. For example, in this embodiment, the process sequence of the second transparent electrode TE2-C can be before the common electrode CE-A. That is, the common electrode CE-A can cover the second transparent electrode TE2-C. However, the present invention is not limited thereto. In another modified embodiment, the process sequence of the second transparent electrode TE2-C can be after the common electrode CE-A, that is, the second transparent electrode TE2-C can cover the common electrode CE-A.
[0055] On the other hand, in this embodiment, in addition to having an opening OP for realizing the electrical connection between the first transparent electrode TE1-A and the capacitor electrode CPE, the coating layer 130A may also have an opening OP” located in the penetration region TA. The first transparent electrode TE1-A can directly cover the portion of the gate insulating layer 110 exposed by the opening OP” through the opening OP” of the coating layer 130A and the contact hole TH” between the insulating layer 121 and the insulating layer 122. That is, only the gate insulating layer 110 is provided between the first transparent electrode TE1-A and the second transparent electrode TE2-C.
[0056] Similar to the display panel 20 in Figure 5, the first transparent electrode TE1-A and the second transparent electrode TE2-C located in the transmissive region TA can be electrically coupled to form a storage capacitor C1, while the common electrode CE-A and the capacitor electrode CPE located in the reflective region RA can be electrically coupled to form another storage capacitor C2.
[0057] More specifically, the storage capacitor of the pixel structure PX-C in this embodiment is formed by the parallel connection of storage capacitor C1 and storage capacitor C2. From another perspective, when the transmittance region TA of the pixel structure PX-C increases, the insufficient storage capacity caused by the reduction of the reflectance region RA can be compensated not only by the setting of the common electrode CE-A and the capacitor electrode CPE, but also by the storage capacitor formed by the first transparent electrode TE1-A and the second transparent electrode TE2-C in the transmittance region TA, which can further improve the overall storage capacity of the pixel structure PX-C. Therefore, the ratio adjustment of the reflectance region RA and the transmittance region TA of the pixel structure PX-C is no longer limited by the storage capacitor requirement, which helps to increase the design flexibility of the pixel structure PX-C when it needs to take into account both optical and electrical performance.
[0058] Furthermore, since the coating layer 130A of this embodiment has an opening OP in the transmissive region TA, the thickness d2 of the liquid crystal layer 300 in the transmissive region TA can be greater than the thickness d1 of the liquid crystal layer 300 in the reflective region RA. The thicknesses d1 and d2 of the liquid crystal layer 300 are defined, for example, along the normal direction (e.g., direction Z) of the substrate surface 100s. Accordingly, the display panel 30 can achieve optimal display effects in both the reflective region RA and the transmissive region TA.
[0059] On the other hand, in this embodiment, the first transparent electrode TE1-A may be provided with multiple micro-slits SLT within the transmissive region TA, and the common electrode layer CEL-A has an electrode opening CELop overlapping the transmissive region TA. More specifically, unlike the portion of the liquid crystal layer 300 within the reflective region RA which is driven by a vertical electric field formed between the common electrode layer CEL-A and the first transparent electrode TE1-A, the portion of the liquid crystal layer 300 within the transmissive region TA is driven by a horizontal electric field formed between the portion of the first transparent electrode TE1-A with micro-slits SLT and the second transparent electrode TE2-C. Since the liquid crystal layer 300 is driven by a horizontal electric field in the transmissive region TA, the viewing angle range of the display panel 30 can be further improved.
[0060] For example, in this embodiment, the common electrode CE-A and the second transparent electrode TE2-C can receive a common voltage, but are not limited thereto. That is, the pixel structure PX-C in this embodiment adopts a bottom-com architecture in the driving mode of the transmission region TA.
[0061] FIG8 is a front view schematic diagram of a display panel according to a fifth embodiment of the present invention. FIG9 is a cross-sectional schematic diagram of the display panel of FIG8. FIG9 corresponds to the section line D-D' of FIG8. For clarity, the second substrate 200 and the liquid crystal layer 300 in FIG9 are omitted from FIG8.
[0062] Referring to Figures 8 and 9, the main difference between the display panel 30A of this embodiment and the display panel 30 of Figures 6 and 7 is that the configuration of the first transparent electrode and the second transparent electrode is different. In the display panel 30A of this embodiment, the first transparent electrode TE1-B of the pixel structure PX-D is located only within the transmittance region TA and is disposed on the insulating layer 121A. The second transparent electrode TE2-D is disposed between the gate insulating layer 110 and the insulating layer 121A and is electrically connected to the capacitor electrode CPE. Only the insulating layer 121A is provided between the first transparent electrode TE1-B and the second transparent electrode TE2-D.
[0063] For example, in this embodiment, the process sequence of the second transparent electrode TE2-D can be before the capacitor electrode CPE. That is, the capacitor electrode CPE can cover the second transparent electrode TE2-D. However, the present invention is not limited thereto. In another modified embodiment, the process sequence of the second transparent electrode TE2-D can be after the capacitor electrode CPE, that is, the second transparent electrode TE2-D can cover the capacitor electrode CPE.
[0064] It is particularly noteworthy that, in this embodiment, the pixel structure PX-D may further include a third transparent electrode TE3, with an overlapping reflective region RA. The third transparent electrode TE3 is disposed between the coating layer 130A and the reflective layer RL, and is electrically connected to the capacitor electrode CPE via the opening OP of the coating layer 130A and the contact hole TH of the insulating layer 121A and the insulating layer 122. In this embodiment, the third transparent electrode TE3 and the first transparent electrode TE1-B may be the same film layer and are electrically independent of each other. That is, the first transparent electrode TE1-B in this embodiment is not electrically connected to the capacitor electrode CPE and the drain DE of the active element T. For example, in this embodiment, the first transparent electrode TE1-B and the common electrode CE-A may receive a common voltage, but this is not a limitation. Therefore, the pixel structure PX-D in this embodiment adopts a top-com architecture in the driving mode of the transmission region TA.
[0065] Similar to the display panel 30 in FIG7, the first transparent electrode TE1-B and the second transparent electrode TE2-D located in the transmissive region TA can be electrically coupled to form a storage capacitor C1, while the common electrode CE-A and the capacitor electrode CPE located in the reflective region RA can be electrically coupled to form another storage capacitor C2. More specifically, the storage capacitor of the pixel structure PX-D in this embodiment is formed by the parallel connection of storage capacitor C1 and storage capacitor C2. From another point of view, when the range of the transmissive region TA of the pixel structure PX-D increases, the insufficient storage capacity caused by the reduction of the range of the reflective region RA can be compensated not only by the setting of the common electrode CE-A and the capacitor electrode CPE, but also by the storage capacitor formed by the first transparent electrode TE1-B and the second transparent electrode TE2-D in the transmissive region TA to further improve the overall storage capacity of the pixel structure PX-D. Therefore, the ratio adjustment of the reflective area RA and the transmissive area TA of the pixel structure PX-D is no longer limited by the storage capacitor requirement, which helps to increase the design flexibility of the pixel structure PX-D when it needs to take into account both optical and electrical performance.
[0066] FIG10 is a front view schematic diagram of a display panel according to a sixth embodiment of the present invention. FIG11 is a cross-sectional schematic diagram of the display panel of FIG10. FIG11 corresponds to the section line E-E' of FIG10. For clarity, the second substrate 200 and the liquid crystal layer 300 in FIG11 are omitted from FIG10.
[0067] Referring to Figures 10 and 11, the difference between the display panel 40 of this embodiment and the display panel 10 of Figures 1 and 2 lies in the configuration of the coating layer. Specifically, in the display panel 40 of this embodiment, in addition to having an opening OP for realizing the electrical connection between the first transparent electrode TE1 and the drain electrode DE, the coating layer 130B may also have an opening OP” located in the penetration region TA. The second transparent electrode TE2 can directly cover the portion of the insulating layer 121 exposed by the opening OP” through the opening OP” of the coating layer 130A.
[0068] Since the cladding layer 130B of this embodiment has an opening OP in the transmissive region TA, the thickness d2 of the liquid crystal layer 300 in the transmissive region TA can be greater than the thickness d1 of the liquid crystal layer 300 in the reflective region RA. The thicknesses d1 and d2 of the liquid crystal layer 300 are defined, for example, along the normal direction (e.g., direction Z) of the substrate surface 100s. Accordingly, the display panel 40 can achieve the best display effect in both the reflective region RA and the transmissive region TA.
[0069] On the other hand, since the storage capacitor C in this embodiment can be set in addition to the overlapping reflection area RA, it can also be set in the overlapping transmission area TA. The ratio adjustment of the reflection area RA and the transmission area TA of the pixel structure PX is no longer limited by the requirements of the storage capacitor C, which helps to increase the design flexibility of the pixel structure PX when it needs to take into account both optical and electrical performance.
[0070] FIG12 is a front view schematic diagram of a display panel according to a seventh embodiment of the present invention. FIG13 is a cross-sectional schematic diagram of the display panel of FIG12. FIG13 corresponds to the section line F-F' of FIG12. For clarity, the second substrate 200 and the liquid crystal layer 300 in FIG13 are omitted from FIG12.
[0071] Referring to Figures 12 and 13, the main difference between the display panel 40A of this embodiment and the display panel 40 of Figures 10 and 11 is that the configuration of the first transparent electrode in the transmission region TA is different. For example, in the display panel 40A of this embodiment, the first transparent electrode TE1-C of the pixel structure PX-E may be provided with multiple micro-slits SLT in the transmission region TA, and the common electrode layer CEL-A has an electrode opening CELop overlapping the transmission region TA.
[0072] More specifically, unlike the portion of the liquid crystal layer 300 within the reflective region RA which is driven by a vertical electric field formed between the common electrode layer CEL-A and the first transparent electrode TE1-A, the portion of the liquid crystal layer 300 within the transmissive region TA is driven by a horizontal electric field formed between the portion of the first transparent electrode TE1-A with micro-slits SLT and the second transparent electrode TE2-C. Because the liquid crystal layer 300 is driven by a horizontal electric field in the transmissive region TA, the viewing angle range of the display panel 40A can be further improved.
[0073] For example, in this embodiment, the second transparent electrode TE2 can receive a common voltage, but is not limited thereto. That is, the pixel structure PX-E in this embodiment adopts a bottom-com architecture in the driving mode of the transmission region TA.
[0074] On the other hand, since the storage capacitor C in this embodiment can be set in addition to the overlapping reflection area RA, it can also be set in the overlapping transmission area TA. The ratio adjustment of the reflection area RA and the transmission area TA of the pixel structure PX-E is no longer limited by the requirements of the storage capacitor C, which helps to increase the design flexibility of the pixel structure PX-E when it needs to take into account both optical and electrical performance.
[0075] In summary, in a display panel according to an embodiment of the present invention, a first transparent electrode and a second transparent electrode are provided in the transmissive area of the pixel structure. The first transparent electrode and the second transparent electrode are electrically coupled to each other and form a storage capacitor electrically connected to the active element. Since the storage capacitor can be arranged overlapping the transmissive area, the ratio adjustment of the reflective area and the transmissive area of the pixel structure is no longer limited by the requirements of the storage capacitor, which helps to increase the design flexibility of the pixel structure when it needs to take into account both optical and electrical performance. [Simplified Explanation of the Diagram]
[0076] FIG1 is a front view schematic diagram of a display panel according to a first embodiment of the present invention. FIG2 is a cross-sectional schematic diagram of the display panel of FIG1. FIG3 is a cross-sectional schematic diagram of a display panel according to a second embodiment of the present invention. FIG4 is a front view schematic diagram of a display panel according to a third embodiment of the present invention. FIG5 is a cross-sectional schematic diagram of the display panel of FIG4. FIG6 is a front view schematic diagram of a display panel according to a fourth embodiment of the present invention. FIG7 is a cross-sectional schematic diagram of the display panel of FIG6. FIG8 is a front view schematic diagram of a display panel according to a fifth embodiment of the present invention. FIG9 is a cross-sectional schematic diagram of the display panel of FIG8. FIG10 is a front view schematic diagram of a display panel according to a sixth embodiment of the present invention. FIG11 is a cross-sectional schematic diagram of the display panel of FIG10. FIG12 is a front view schematic diagram of a display panel according to a seventh embodiment of the present invention. FIG13 is a cross-sectional schematic diagram of the display panel of FIG12.
Claims
1. A display panel, comprising: First substrate; A pixel structure is disposed on the first substrate and has a reflective area and a transmissive area. The pixel structure includes: an active element; a first transparent electrode overlapping the transmissive area; a reflective layer disposed on the active element and defining the reflective area; a second transparent electrode overlapping the transmissive area and located between the first transparent electrode and the first substrate; and an insulating layer disposed between the first transparent electrode and the second transparent electrode. The first transparent electrode or the second transparent electrode is electrically connected to the active element, and the first transparent electrode and the second transparent electrode are electrically coupled to form a storage capacitor.
2. The display panel as claimed in claim 1, wherein the first transparent electrode and the second transparent electrode are disposed overlapping the reflective area, and the first transparent electrode is electrically connected to the active element.
3. The display panel as described in claim 2, further comprising: A coating layer is disposed between the first transparent electrode and the first substrate, and covers the active element, wherein the second transparent electrode is disposed between the insulating layer and the coating layer.
4. The display panel as described in claim 3, wherein the pixel structure further includes: A common electrode is disposed between the coating layer and the first transparent electrode and is located within the reflective area. The second transparent electrode extends into the reflective area and is in direct contact with the common electrode.
5. The display panel as described in claim 4, wherein the pixel structure further includes: A capacitor electrode is located in the reflective region and extends from the drain of the active element, wherein the common electrode is electrically coupled to the capacitor electrode to form another storage capacitor.
6. The display panel as described in claim 3, further comprising: The second substrate is disposed overlapping the first substrate; A common electrode layer is disposed on the second substrate; A liquid crystal layer is disposed between the first substrate and the second substrate, wherein the coating layer has an opening located in the transmissive region, and the thickness of the liquid crystal layer in the transmissive region is greater than the thickness of the liquid crystal layer in the reflective region.
7. The display panel as claimed in claim 6, wherein the first transparent electrode has a plurality of micro-slits in the penetrating region, and the common electrode layer has electrode openings overlapping the penetrating region.
8. The display panel as claimed in claim 1, wherein the reflective layer and the second transparent electrode are the same film layer and are electrically connected to each other.
9. The display panel as claimed in claim 8, wherein the thickness of the second transparent electrode is less than the thickness of the reflective layer.
10. The display panel as claimed in claim 8, wherein the material of the second transparent electrode and the reflective layer comprises silver.
11. The display panel as claimed in claim 8, wherein the first transparent electrode is electrically coupled to the reflective layer and forms another storage capacitor.
12. The display panel as described in claim 1, further comprising: A coating layer is disposed between the first transparent electrode and the first substrate and covers the active element. The coating layer has an opening located in the penetration region, wherein the second transparent electrode is disposed between the coating layer and the first substrate.
13. The display panel as described in claim 12, further comprising: The second substrate is disposed overlapping the first substrate; A common electrode layer is disposed on the second substrate; A liquid crystal layer is disposed between the first substrate and the second substrate, wherein the thickness of the liquid crystal layer in the transmissive region is greater than the thickness of the liquid crystal layer in the reflective region.
14. The display panel as claimed in claim 13, wherein the first transparent electrode has a plurality of microslits in the penetrating region, and the common electrode layer has electrode openings overlapping the penetrating region.
15. The display panel as claimed in claim 12, wherein the pixel structure further comprises: The capacitor electrode is located in the reflective region and extends from the drain of the active element; A common electrode is disposed between the capacitor electrode and the first substrate and located in the reflective region, the common electrode overlapping the capacitor electrode.
16. The display panel as claimed in claim 15, wherein the first transparent electrode extends into the reflective area and is electrically connected to the capacitor electrode, the second transparent electrode is electrically connected to the common electrode, and the capacitor electrode is electrically coupled to the common electrode to form another storage capacitor.
17. The display panel as claimed in claim 15, wherein the pixel structure further comprises: A third transparent electrode is disposed overlapping the reflective area and is electrically connected to the capacitor electrode.
18. The display panel as claimed in claim 17, wherein the first transparent electrode and the third transparent electrode are in the same film layer and are electrically independent of each other.
19. The display panel as claimed in claim 17, wherein the second transparent electrode is electrically connected to the capacitor electrode, the capacitor electrode being electrically coupled to the common electrode to form another storage capacitor.
20. The display panel as claimed in claim 1, wherein the first transparent electrode extends into the reflective area and is electrically connected to the reflective layer.