Reflective blank photomask and reflective photomask

TW202636208APending Publication Date: 2026-09-01TEKSCEND PHOTOMASK CORP
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Patent Information

Application Number
TW115106644
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-26
Filing Date
2026-02-24
Publication Date
2026-09-01

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Abstract

A reflective blank photomask with excellent hydrogen radical resistance is provided. The reflective blank photomask and a reflective photomask fabricated using the reflective blank photomask include: a substrate; a reflective layer disposed on the substrate and reflecting EUV light; a protective layer disposed on the reflective layer and protecting the reflective layer; and an absorption layer disposed on the protective layer and absorbing EUV light. The absorption layer includes a first absorption layer and a second absorption layer, wherein the first absorption layer and the second absorption layer each contain at least 40 at% of a metal element with a positive hydrogen dissolution energy Es.
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