Capacitor and memory device including the same, method of manufacturing capacitor, method of manufacturing memory device

Abstract

According to an embodiment of the present invention, a capacitor includes: a first electrode; a second electrode disposed at a distance from the first electrode; and an interface structure disposed between the first electrode and the second electrode, wherein the interface structure includes: a dielectric film disposed between the first electrode and the second electrode; a first interface film disposed between the first electrode and the dielectric film; and a second interface film disposed between the second electrode and the dielectric film, wherein the dielectric film includes: a first dielectric film comprising an oxide with a first metal as the central element being a tetravalent element; a second dielectric film comprising an oxide with a second metal as the central element being a trivalent element; a third dielectric film comprising an oxide with the first metal as the central element being a tetravalent element; and a fourth dielectric film comprising an oxide with the second metal as the central element being a trivalent element, wherein the thickness of the first dielectric film and the third dielectric film is each

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