Semiconductor laser and method of manufacturing semiconductor laser
TW202636565APending Publication Date: 2026-09-01SONY SEMICON SOLUTIONS CORP
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Patent Information
- Application Number
- TW114147444
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-27
- Filing Date
- 2025-12-04
- Publication Date
- 2026-09-01
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Figure TWG2TA001074801_001 
Figure TWG2TA001074801_002 
Figure TWG2TA001074801_003
Abstract
A semiconductor device includes a first cleaved surface, a second cleaved surface, and a light emitting surface, wherein the first cleaved surface and the second cleaved surface are disposed on respective planes which are substantially parallel to one another and which are orthogonal to a plane on which the emitting surface is disposed, and a plurality of recessed regions disposed along the first cleaved surface and the second cleaved surface on a first portion of the first cleaved surface and a second portion of the second cleaved surface which includes an inactive layer.
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