Laser structure and manufacturing method thereof

Abstract

The present application relates to a laser structure and a manufacturing method thereof. The manufacturing method comprises: providing a substrate, successively forming a semiconductor layer and an epitaxial structure layer on the substrate; etching the epitaxial structure layer to form at least one light-emitting unit at least comprising a top reflection layer, and a channel surrounding it; respectively forming first and second contact layers on upper surface of the semiconductor layer and the top reflection layer; forming a first dielectric layer covering the first and second contact layers and the exposed surface of the light-emitting unit, and forming first and second trenches in the first dielectric layer respectively, wherein bottoms of the first and second trenches expose the first and second contact layers; forming first and second electrodes filling the first and second trenches and covering the upper surface of the first dielectric layer, wherein a positive projection of an end of the second electrode away from the light-emitting unit on the substrate overlaps with a positive projection of an end of the first electrode adjacent to the light-emitting unit on the substrate, and an insulating structure comprising an air gap or a planarization insulating layer is provided between the first and second electrodes corresponding to a projection overlapping portion.

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