Semiconductor structure and manufacturing method thereof

Abstract

The semiconductor structure includes a substrate and a word line structure. The substrate has a trench. The word line structure is located in the substrate. The word line structure includes a first spacer, a word line conductive layer, a barrier layer, and a second spacer. The first spacer is disposed on the sidewall of the trench. The word line conductive layer is filled in bottom of the trench. The barrier layer is disposed between the first spacer and the word line conductive layer. The second spacer disposed on the barrier layer and the word line conductive layer, the second spacer comprises low-K dielectric material, wherein along a first direction from the first spacer to the word line conductive layer, the second spacer has a gradually decreasing thickness.

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