Semiconductor devices

Abstract

The semiconductor device includes an etch stop pattern on a substrate and extending in a vertical direction and in a first direction parallel to the upper surface of the substrate; channels spaced apart from each other in the vertical direction and at least partially extending through the etch stop pattern; gate electrodes extending in the first direction, respectively surrounding first end portions in the second direction of the channels, and respectively including gate electrodes; isolation patterns disposed between the gate electrodes; a bit line electrically connected to the channels and extending in the vertical direction along sidewalls in the second direction of the first end portions of the channels; and capacitors respectively on second end portions in the second direction of the channels, wherein the etch stop pattern and the gate electrodes are spaced apart from each other by the isolation patterns and do not contact each other.

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