Contact structure having vertical isolation between pads, manufacturing method thereof and system

Abstract

A system and a method for a contact structure are disclosed. The contact structure includes at least a first contact pillar and a second contact pillar. The first contact pillar is connected to a first contact point on a first metal layer in a first semiconductor region at a first depth. The second contact pillar is connected to a second contact point on a second metal layer in the first semiconductor region at a second depth longer than the first depth with respect to a top surface of a second semiconductire region on top of the first semiconductor region. The first and second contact points are isolated in a direction along the first and second depths. The first and second metal layers correspond to first and second wordlines (WLs), respectively, of a memory circuit.

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