Semiconductor device

Abstract

A semiconductor device includes a capacitor structure, a buried contact on the capacitor structure, a hollow semicylindrical-shaped vertical channel layer extending on the buried contact in a vertical direction and having an inner wall and an outer wall, a hollow semicylindrical-shaped gate dielectric layer surrounding the outer wall of the vertical channel layer and having an inner wall and an outer wall, word lines each in contact with the outer wall of the gate dielectric layer, spaced apart from each other in a first horizontal direction, and extending in a second horizontal direction intersecting the first horizontal direction, a semicylindrical-shaped direct contact in contact with the inner wall of the vertical channel layer, and a bit line having a post in contact with an upper surface of the direct contact and extending in the first horizontal direction.

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