Semiconductor devices including word lines

Abstract

A semiconductor device according to some example implementations of the present disclosure includes: a first channel pattern extending on a substrate in a first direction, the first channel pattern including a first surface and a second surface spaced apart from the first surface in the first direction; a bit line in contact with the first surface of the first channel pattern and extending in a second direction, wherein the second direction intersects the first direction; a second channel pattern in contact with the bit line and adjacent to the first channel pattern and extending in the first direction; an information storage element in contact with the second surface of the first channel pattern; and a word line disposed between the first channel pattern and the second channel pattern and adjacent to the information storage element in the first direction.

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