Semiconductor memory device

Abstract

Provided is a semiconductor memory device including a first semiconductor pattern extending in a first horizontal direction, a second semiconductor pattern having a horizontal width that is less than a horizontal width of the first semiconductor pattern in a second horizontal direction, being spaced apart from the first semiconductor pattern in the second horizontal direction, and extending in the first horizontal direction, the second horizontal direction being substantially orthogonal to the first horizontal direction, a gate structure surrounding the first semiconductor pattern and the second semiconductor pattern and extending in the second horizontal direction, a bit line connected to an end of the first semiconductor pattern in the first horizontal direction and extending in a vertical direction, and a capacitor structure connected to another end of the first semiconductor pattern in the first horizontal direction.

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