Semiconductor devices and methods of manufacture

TW202636770APending Publication Date: 2026-09-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114118766
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-21
Filing Date
2025-05-20
Publication Date
2026-09-01

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Abstract

Semiconductor devices and methods of manufacture are presented in which a bottom metal is formed over a substrate and the bottom metal is treated to form a first oxygen-free zone. A first dielectric material is deposited over the bottom metal, and the first dielectric material is patterned to expose the bottom metal. A capacitor is formed within the first dielectric material.
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