Paired capacitor and manufacturing method thereof

TW202636771APending Publication Date: 2026-09-01UNITED MICROELECTRONICS CORP
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Patent Information

Application Number
TW114105917
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-02-18
Publication Date
2026-09-01

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Abstract

The invention provides a capacitor structure, which comprises a substrate, a left region, a middle region and a right region defined on the substrate, wherein the middle region is located between the left region and the right region, a first capacitor structure comprising a first lower electrode pattern and a first upper electrode pattern, wherein the first lower electrode pattern and the first upper electrode pattern are located in different regions and in different layers in a vertical direction, and a second capacitor structure comprising a second lower electrode pattern and a second upper electrode pattern, wherein the second lower electrode pattern and the second upper electrode pattern are located in different regions and in different layers in the vertical direction.
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