Semiconductor device

TW202636773APending Publication Date: 2026-09-01NAN YA TECH
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114125225
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-24
Filing Date
2025-07-03
Publication Date
2026-09-01

Smart Images

  • Figure TWG2TA001074221_001
    Figure TWG2TA001074221_001
  • Figure TWG2TA001074221_002
    Figure TWG2TA001074221_002
  • Figure TWG2TA001074221_003
    Figure TWG2TA001074221_003
Patent Text Reader

Abstract

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capacitor structure including a bottom electrode layer positioned above the substrate, a treated interface layer positioned on the bottom electrode layer, a capacitor bottom dielectric layer positioned on the treated interface layer, a capacitor top dielectric layer positioned on the capacitor bottom dielectric layer, and a top electrode layer positioned on the capacitor top dielectric layer. The treated interface layer includes titanium oxide nitride.
Need to check novelty before this filing date? Find Prior Art