Trigger silicon controlled rectifier and fabrication method thereof
TW202636774APending Publication Date: 2026-09-01GLOBALFOUNDRIES US INC
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Patent Information
- Application Number
- TW115116919
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2022-09-15
- Filing Date
- 2023-08-15
- Publication Date
- 2026-09-01
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Abstract
The present disclosure relates to a structure including a trigger element within a semiconductor-on-insulator (SOI) substrate, and a silicon controlled rectifier (SCR) under a buried insulator layer of the SOI substrate. The trigger element is between an anode and a cathode of the SCR.
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