Semiconductor device with improved breakdown voltage and associated manufacturing method
TW202636778APending Publication Date: 2026-09-01MONOLITHIC POWER SYSTEMS INC
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Patent Information
- Application Number
- TW114142951
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-11-05
- Filing Date
- 2025-11-04
- Publication Date
- 2026-09-01
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Figure TWG2TA001074593_001 
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Abstract
A method for forming a semiconductor device having a tub. The method includes forming a substrate of a first conductivity type that includes a tub bottom layer of the tub. The tub bottom layer is of a second conductivity type that is opposite to the first conductivity type and has a tub bottom layer peak dopant concentration plane that is substantially away from a top surface of an initial substrate layer of the substrate for a predetermined tub bottom layer buried depth that is essentially greater than
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