Semiconductor devices and methods of manufacturing thereof

Abstract

A semiconductor device comprises a plurality of nanostructures, a first epitaxial structure, a second epitaxial structure, a gate structure, a plurality of inner spacers, and a plurality of silicon-based cap layers. The plurality of nanostructures can be disposed over and spaced from one another. The first epitaxial structure and a second epitaxial structure can be coupled to ends of each of the plurality of nanostructures, respectively. The gate structure wraps around each of the plurality of nanostructures. Each of the plurality of inner spacers can be interposed between a corresponding section of the gate structure and the first or second epitaxial structure. Each of the silicon-based cap layers can be disposed above or below a corresponding one of the plurality of inner spacers.

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