Thin film transistor

Abstract

A thin film transistor includes a semiconductor layer, a first gate, a first gate insulating layer, a drain, a source, a second gate insulating layer and a second gate. The semiconductor layer includes first doping area, a second doping area and a channel area, and the channel area connects the first doping area with the second doping area. The first gate is above the semiconductor layer, wherein the channel area is fully overlapped with the first gate. The first gate insulating layer is disposed between the first gate and the semiconductor layer. The drain is electrically connected to the first doping area of the semiconductor layer. The source is electrically connected to the second doping area of the semiconductor layer. The second gate insulating layer is disposed between the second gate and the semiconductor layer. The second gate is overlapped with an entirety of the channel area and a portion of the first doping area, and in a direction from the source to the drain, a size of a portion of the second gate overlapped with the first doping area ranges from

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