Transistor

Abstract

The present disclosure provides a transistor including a semiconductor and a plurality of gate electrodes overlapping with the semiconductor. The semiconductor includes a plurality of channel regions, at least one of middle regions, a first and a second regions, and a first lightly doped region. Each of the channel regions overlaps with one of the gate electrodes. One of the at least one of middle regions is disposed between the neighboring two of the channel regions. The first and the second regions are located at opposite two ends of the semiconductor. The first lightly doped region is disposed between the first region and one of the channel regions adjacent to the first region.

Images