Planar thin film transistor and method of manufacturing the same

Abstract

The present disclosure relates to a transistor. The transistor comprises a substrate and a low dimensional material. A source electrode is arranged on the material. A drain electrode is also arranged on the material. A channel is defined by the carbon-based material in a region extending between the source electrode and the drain electrode. The transistor comprises a gate structure arranged on the material in an area of the channel. The gate structure comprises a gate dielectric arranged on the material and extending from the source electrode to the drain electrode. The gate structure also comprises a gate electrode arranged on the gate dielectric and a spacer dielectric arranged also on the gate dielectric. The spacer dielectric is arranged in a first space between the gate electrode and the source electrode and in a second space between the gate electrode and the drain electrode. The present disclosure also relates to a method for manufacturing such a transistor.

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