Ferroelectric field effect transistor, memory device including the same, and electronic apparatus including the memory device

Abstract

A ferroelectric field effect transistor (FeFET), a memory device including the FeFET, and an electronic apparatus including the FeFET are provided. The FeFET includes a gate electrode, a ferroelectric layer provided on the gate electrode, an intermediate conductive layer provided on the ferroelectric layer, a gate insulating layer provided on the intermediate conductive layer, a channel layer provided on the gate insulating layer, and a source electrode and a drain electrode provided on the channel layer. The source electrode and the drain electrode each contact the gate insulating layer.

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