Semiconductor device

Abstract

A semiconductor device according to embodiments includes a semiconductor device comprising a substrate, a barrier wall on the substrate and extending in a first direction substantially perpendicular to an upper surface of the substrate, a first channel structure and a second channel structure spaced apart from one another across the barrier wall, a gate structure surrounding the first channel structure and the second channel structure, a first source / drain pattern connected to one side of the first channel structure, a second source / drain pattern connected to one side of the second channel structure and spaced apart from the first source / drain pattern across the barrier wall, an insulating liner on at least a portion of a side surface of the barrier wall, wherein the barrier wall includes a first region between the first channel structure and the second channel structure, and a second region between the first source / drain pattern and the second source / drain pattern and wherein an upper surface of the second region is located on a higher level than that of an upper surface of a portion of the insulating liner on a side surface of the second region.

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