Semiconductor device

Abstract

An example semiconductor device includes a substrate insulating layer; an insulating structure penetrating the substrate insulating layer; a first transistor on one side of the insulating structure; a second transistor on one side opposing the one side of the insulating structure; and dummy gate structures between the first transistor and the insulating structure and between the second transistor and the insulating structure, wherein the insulating structure includes a lower insulating pattern penetrating the substrate insulating layer; and an upper insulating liner covering at least a portion of side surfaces, opposing each other, of the dummy gate structures, and wherein the lower insulating pattern including a material having a dielectric constant different from a dielectric constant of the substrate insulating layer.

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