Semiconductor device

Abstract

A semiconductor device includes first and second lower patterns protruding from an upper surface of a substrate in a first direction, a first trench between the lower patterns, plural first nano sheets stacked on the first lower pattern, plural second nano sheets stacked on the second lower pattern, a first gate electrode surrounding the first nano sheets, a second gate electrode surrounding the second nano sheets, a first field insulating film in the trench, an insulating structure penetrating the field insulating film and the substrate in the first direction and including a buried portion embedded in the field insulating film and the substrate, and a gate separation structure extending in the first direction between the first and second gate electrodes and disposed on the insulating structure. The buried portion may have a width in a second direction that decreases from a top portion toward a bottom portion.

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