Nitride semiconductor devices

Abstract

A nitride semiconductor device (1) includes a power FET (11), an ESD protection FET (12), a diode (13), and a resistive element (14). The gate structure (50G) of the power FET (11) includes a p-type semiconductor layer (52G) and a gate electrode (54G) connected to the p-type semiconductor layer (52G) by a Schottky junction. The anode structure (50A) of the diode (13) includes a p-type semiconductor layer (52A). The gate structure (50G), the ESD protection FET (12), the diode (13), and the resistive element (14) are described. The drain structure (51D) of ET (12) is electrically connected to the anode structure (50A). The source structure (50S) of the power FET (11), the source structure (51S) of the ESD protection FET (12), and the terminal structure (50R) of the resistor element (14) are electrically connected to each other. The gate structure (51G) of the ESD protection FET (12), the cathode structure (50K) of the diode (13), and the terminal structure (51R) of the resistor element (14) are electrically connected to each other.

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