Integrated circuit device and method of making same

TW202636815APending Publication Date: 2026-09-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114114124
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-24
Filing Date
2025-04-15
Publication Date
2026-09-01

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Abstract

Some embodiments relate to an integrated circuit (IC) device including a first IC die and a second IC die. The first IC die includes a plurality of pixel circuits. Each of the plurality of pixel circuits includes a photodetector. The second IC die is disposed under, and coupled to, the first IC die and includes a charge storage structure. The charge storage structure includes a lower conductive structure contiguously spanning at least a portion of each of the plurality of pixel circuits in a plan view of the IC device, at least one dielectric structure disposed on the lower conductive structure, and a plurality of upper conductive elements disposed on the at least one dielectric structure. Each of the plurality of upper conductive elements is electrically connected to a corresponding one of the plurality of pixel circuits.
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