A deep n- well driven ramp buffer

TW202636818APending Publication Date: 2026-09-01OMNIVISION TECHNOLOGIES INC
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Patent Information

Application Number
TW115119543
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-02-10
Filing Date
2024-01-26
Publication Date
2026-09-01

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    Figure TWG2TA001075416_003
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Abstract

A local ramPbuffer iNcludes a deePN- well layer disposed iNa P- substrate beNeath a surface of the P- substrate, a P- well disposed betweeNthe surface of the P- substrate aNd the deePN- well layer, aNd aNN- well structure disposed iNthe P- substrate aNd coupled to the deePN- well layer. The N- well structure is disposed betweeNthe surface of the P- substrate aNd the deePN- well layer. The P- well is disposed iNside aNopeNiNg iNthe N- well structure. The N- well structure aNd the deePN- well layer are coNfigured to isolate the P- well withiNthe opeNiNg. A source follower traNsistor is disposed iNthe P- well. The source follower traNsistor iNcludes a gate termiNal coupled to the N- well structure aNd a ramPgeNerator.
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