Optical devices, optical structures and methods of forming the same

TW202636821APending Publication Date: 2026-09-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114114652
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-27
Filing Date
2025-04-17
Publication Date
2026-09-01

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Abstract

A structure includes a first p-type region over a substrate; a second p-type region against the first p-type region, wherein the second p-type region is more heavily doped than the first p-type region; a first n-type region against the first p-type region, wherein a portion of the first n-type region and a portion of the first p-type region collectively form a waveguide region; a second n-type region against the first n-type region, wherein the second n-type region is more heavily doped than the first n-type region; a first conductive oxide layer on the first p-type region; and a second conductive oxide layer on the first n-type region.
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