Gallium nitride structures and their manufacturing methods

Abstract

The object of this invention is to provide at least one of a gallium nitride (GaN) structure and a method for manufacturing the same; the GaN structure has a smoother surface compared to conventional GaN sintered bodies, thereby enabling epitaxial growth of GaN films. The GaN structure 10 of this invention comprises: a GaN sintered body layer 2, and a high-density GaN layer 1 on the surface of the GaN sintered body layer 2; and the area density of the high-density GaN layer 1 is 95.0% or more.

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