Pulsed chemical vapor deposition with programmable logic control

Abstract

Embodiments described herein generally relate to semiconductor device fabrication. More specifically, embodiments of the present disclosure relate to methods of forming a conformal liner on inner sidewalls of a via and / or a trench structure. The present disclosure generally provides a method of depositing a liner layer in a semiconductor structure. The method includes forming a passivation layer, forming a barrier layer, forming the liner layer, and filing the via and the trench with a conductive material. Forming the liner layer includes holding a precursor gas in a gas line upstream from a processing chamber behind a closed programmable logic control (PLC) valve, wherein the precursor gas is held behind the closed PLC valve for a PLC valve close period and releasing the precursor gas into the processing chamber by opening the PLC valve, wherein the precursor gas is released into the processing chamber for a PLC valve open period.

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