Repairing low-k materials with silicon-free treatment precursors to prevent silicon residue formation

Abstract

Exemplary methods of semiconductor processing may include providing a silicon-free treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. An exposed region of a silicon-containing material and an exposed region of a metal-containing material may be disposed on the substrate. The methods may include contacting the substrate with the silicon-free treatment precursor. The contacting may reduce a dielectric constant of the silicon-containing material. Subsequent to contacting the substrate with the silicon-free treatment precursor, a surface of the metal-containing material may be silicon-free.

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