Selective hard mask etching using non-plasma microwave processing

Abstract

Embodiments of the present disclosure generally relate to non-plasma methods of processing a substrate. More specifically, the methods disclosed herein incorporate microwave oxidation that is used to selectively etch materials during semiconductor device manufacturing. The method for etching a semiconductor device structure is disclosed includes performing a microwave oxidation etch process on the semiconductor device structure, wherein a hard mask is disposed over at least a portion of the semiconductor device structure. The microwave oxidation etch process includes flowing a first process gas over the semiconductor device structure and delivering a microwave energy to the first process gas without generating a plasma. The method further includes performing a preclean process on the semiconductor device structure. The preclean process includes flowing a second process gas over the semiconductor device structure.

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