Method for post gas development treatment of metal oxide photoresist

TW202637480APending Publication Date: 2026-09-16TOKYO ELECTRON LTD
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Patent Information

Application Number
TW115100878
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-13
Filing Date
2026-01-09
Publication Date
2026-09-16

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Abstract

A method for processing a substrate includes receiving the substrate including a metal oxide photoresist (MOR) layer disposed over an underlying layer, the MOR layer including a first region and a second region. The method further includes performing a gas development treatment on the MOR layer to remove portions of the first region. And the method further includes exposing the MOR layer to a gas mixture to remove remaining portions of the first region after the gas development treatment to form a patterned MOR mask.
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