Composition for forming resist underlayer film and method for manufacturing semiconductor substrate

TW202637527APending Publication Date: 2026-09-16JSR CORPORATION
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Patent Information

Application Number
TW115108141
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-13
Filing Date
2026-03-05
Publication Date
2026-09-16

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Abstract

This invention provides a composition for forming a resist underlayer film capable of forming a film with excellent embedding properties and bending resistance, and a method for manufacturing a semiconductor substrate. A composition for forming a resist underlayer film contains a carbonyl-containing compound and a solvent. The carbonyl-containing compound has a molecular weight of 210 or more and has a partial structure represented by the following formula (A1). (In the formula, Ar1 and Ar2 are aromatic rings with 6 to 20 carbon atoms; R1 and R2 are hydroxyl, nitro, amino, hydrogen sulfide, halogen atoms, monovalent organic groups with 1 to 20 carbon atoms, or, in the case of multiple R1 or R2, two of the multiple R1 or R2 are combined to form a ring structure with 3 to 20 carbon atoms; * and ** are bonding sites with other atoms constituting the carbonyl-containing compound.)
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