Resistor composition, resistor pattern formation method, compounds and polymers

TW202637540APending Publication Date: 2026-09-16TOKYO OHKA KOGYO CO LTD
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Patent Information

Application Number
TW114150559
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-23
Filing Date
2025-12-22
Publication Date
2026-09-16
Patent Text Reader

Abstract

This invention provides a resist composition that maintains good sensitivity and improves resolution and exposure tolerance during resist pattern formation. It employs a resist composition that generates acid through exposure and alters the solubility in the developer through the action of the acid. The resist composition contains a resin component (A1), which contains a constituent unit (a0) derived from a compound represented by the following general formula (a0-1). In the formula, WO represents a polymerizable group; X0 represents a hydrogen atom or an alkyl group; Ar01 represents an aryl group that may have substituents; La01 represents a single bond or a divalent linking group; R01 represents a hydrocarbon group that may have substituents; Rpg0 represents an acid-dissociable group; and n0 represents an integer greater than 1 allowed by the atomic valence.
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