Hypervalent iodine compound, resist composition, laminate obtained from the resist composition, and patterning process
TW202637546APending Publication Date: 2026-09-16SHIN ETSU CHEMICAL CO LTD
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Patent Information
- Application Number
- TW115100219
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-06
- Filing Date
- 2026-01-05
- Publication Date
- 2026-09-16
Abstract
carbon atoms and optionally containing a heteroatom, the R1 and the R2 optionally being bonded to each other to form a ring together with the carbon atoms bonded thereto and the atoms between the carbon atoms. This can provide: a non-chemically amplified resist composition excellent in sensitivity and resolution in lithography using a high-energy beam, especially electron beam (EB) lithography and EUV lithography; a laminate obtained from the resist composition; and a patterning process using the resist composition.
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