Hypervalent iodine compound, resist composition, laminate obtained from the resist composition, and patterning process

TW202637546APending Publication Date: 2026-09-16SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
TW115100219
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-06
Filing Date
2026-01-05
Publication Date
2026-09-16
Patent Text Reader

Abstract

carbon atoms and optionally containing a heteroatom, the R1 and the R2 optionally being bonded to each other to form a ring together with the carbon atoms bonded thereto and the atoms between the carbon atoms. This can provide: a non-chemically amplified resist composition excellent in sensitivity and resolution in lithography using a high-energy beam, especially electron beam (EB) lithography and EUV lithography; a laminate obtained from the resist composition; and a patterning process using the resist composition.
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