Manufacturing method of transfer substrate and resist composition for semiconductor manufacturing process

Abstract

This invention relates to a method for manufacturing a transfer substrate, which includes the following steps: providing a substrate having a resist pattern and a lower film; electrostatically adsorbing the substrate onto a chuck using a rare gas plasma; and etching the substrate electrostatically adsorbed onto the chuck using a halide plasma. The resist composition constituting the resist pattern contains a resin component (A1) whose solubility in a developer changes due to the action of an acid. The molecular weight percentage (PM) of the protecting group relative to the sum of the molecular weights of the monomers that derive from each constituent unit of the resin component (A1) multiplied by the molar ratio of each constituent unit is 32% or less, and the sum of the contribution rate (RC) of the cyclic structure in each constituent unit of the resin component (A1) multiplied by the molar ratio of each constituent unit (RCt) is 0.6 or more.

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